2SA1774L-X-AN3-R datasheet(2/3 Pages) UTC

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2SA1774

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R221-011.C

ABSOLUTE MAXIMUM RATING (TA=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-6

Collector Current

-0.15

Collector Power Dissipation

SOT-23

0.22

SOT-523

0.15

Junction Temperature

150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range

and assured by design from –20℃~85℃.

ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC = -50µA

-60

Collector-Emitter Breakdown Voltage

BVCEO

IC = -1mA

-50

Emitter-Base Breakdown Voltage

BVEBO

IE = -50µA

-6

Collector Cutoff Current

ICBO

VCB= -60V

-0.1

µA

Emitter Cutoff Current

IEBO

VEB= -6V

-0.1

µA

DC Current Transfer Ratio

hFE

VCE= -6V, IC= -1mA

120

560

Collector-Emitter Saturation Voltage

VCE (SAT)

IC=-50mA, IB=−5mA

-0.5

Transition Frequency

VCE= -12V, IE=2mA, f=100MHz

140

MHz

Output Capacitance

COB

VCB= -12V, IE=0A, f=1MHz

4.0

5.0

CLASSIFICATION OF hFE1

RANK

Range

120 ~ 270

180 ~ 390

270 ~ 560

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