3N60L-TM3-R datasheet(2/8 Pages) UTC

2 / 8 page

3N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-110,G

ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

3.0

Continuous Drain Current

3.0

Pulsed Drain Current (Note 2)

IDM

Single Pulsed (Note 3)

EAS

200

Avalanche Energy

Repetitive (Note 2)

EAR

7.5

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

TO-220F/TO-220F1

Power Dissipation

TO-251/TO-252

Junction Temperature

+150

℃

Operating Temperature

TOPR

-55 ~ +150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

TO-220

62.5

TO-220F/TO-220F1

62.5

Junction to Ambient

TO-251/TO-252

θJA

110

°C/W

TO-220

1.67

TO-220F/TO-220F1

3.68

Junction to Case

TO-251/TO-252

θJC

2.5

°C/W

3N60L-TM3-R Datasheet(PDF) 2 Page - Unisonic Technologies

3N60L-TM3-R Datasheet(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL