HE8050G-X-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

HE8050

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R211-018,C

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

SOT-23

350

SOT-89

500

Collector Dissipation

TO-92/TO-92NL

Collector Current

1.5

Junction Temperature

+150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=100μA,IE=0

Collector-Emitter Breakdown Voltage

BVCEO

IC=2mA,IB=0

Emitter-Base Breakdown Voltage

BVEBO

IE=100μA,IC=0

Collector Cut-Off Current

ICBO

VCB=35V,IE=0

100

Emitter Cut-Off Current

IEBO

VEB=6V,IC=0

100

hFE1

VCE=1V,IC=5mA

135

hFE2

VCE=1V,IC=100mA

160

500

DC Current Gain

hFE3

VCE=1V,IC=800mA

110

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=800mA,IB=80mA

0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=800mA,IB=80mA

1.2

Base-Emitter Saturation Voltage

VBE

VCE=1V,IC=10mA

1.0

Current Gain Bandwidth Product

VCE=10V,IC=50mA

100

MHz

Output Capacitance

Cob

VCB=10V,IE=0

f=1MHz

9.0

CLASSIFICATION of hFE2

RANK

RANGE

120-200

160-300

250-500

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