7N60ZG-TQ2-R datasheet(2/6 Pages) UTC

2 / 6 page

7N60Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-349.D

ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

7.4

Continuous Drain Current

7.4

Pulsed Drain Current (Note 1)

IDM

29.6

Avalanche Energy

Single Pulsed (Note 3)

EAS

600

Repetitive (Note 2)

EAR

14.2

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

142

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

θJC

0.88

°C/W

7N60ZG-TQ2-R Datasheet(PDF) 2 Page - Unisonic Technologies

7N60ZG-TQ2-R Datasheet(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL