MJE13003L-P-X-T92-R datasheet(3/8 Pages) UTC

3 / 8 page

MJE13003-P

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R204-027.A

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

(Note)

Collector-Emitter Sustaining Voltage

VCEO(SUS) IC=10 mA , IB=0

400

TC=25°C

Collector Cutoff Current

TC=100°C

ICEO

VCEO=Rated Value,

VBE(OFF)=1.5 V

Emitter Cutoff Current

IEBO

VEB=9 V, IC=0

SECOND BREAKDOWN

Second Breakdown Collector Current with bass

forward biased

Is/b

See Fig.5

Clamped Inductive SOA with base reverse biased

RBSOA

See Fig.6

ON CHARACTERISTICS

(Note)

hFE1

IC=0.4A, VCE=5V

DC Current Gain

hFE2

IC=1A, VCE=5V

IC=0.5A, IB=0.1A

0.5

IC=1A, IB=0.25A

IC=1.2A, IB=0.4A

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=1A, IB=0.25A, TC=100°C

IC=0.5A, IB=0.1A

IC=1A, IB=0.25A

1.2

Base-Emitter Saturation Voltage

VBE(SAT)

IC=1A, IB=0.25A, TC=100°C

1.1

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

IC=100mA, VCE=10V, f=1MHz

MHz

Output Capacitance

COB

VCB=10V, IE=0, f=0.1MHz

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

0.05 0.1

μs

Rise Time

0.5

μs

Storage Time

μs

Fall Time

VCC=125V, IC=1A, IB1=IB2=0.2A,

tP=25μs, Duty Cycle≤1%

0.4

0.7

μs

Inductive Load, Clamped (Table 1)

Storage Time

tSTG

1.7

μs

Crossover Time

0.29 0.75

μs

Fall Time

IC=1A, Vclamp=300V, IB1=0.2A,

VBE(OFF)=5Vdc, TC=100°C

0.15

μs

Note: Pulse Test : PW=300μs, Duty Cycle≤2%

CLASSIFICATION OF hFE1

RANK

RANGE

14 ~ 22

21 ~ 27

26 ~ 32

31 ~ 37

36 ~ 42

41 ~ 47

46 ~ 52

51 ~ 57

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