MMBF170G-AE2-R datasheet(1/2 Pages) UTC

Part #	MMBF170G-AE2-R

Description	0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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1 / 2 page

UNISONIC TECHNOLOGIES CO., LTD

MMBF170

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 2

QW-R502-629.a

0.5A, 60V N-CHANNEL

ENHANCEMENT MODE FIELD

EFFECT TRANSISTOR

DESCRIPTION

The UTC MMBF170 is an N-channel enhancement MOSFET

using UTC’s advanced technology to provide the customers with

perfect RDS(ON), low input capacitance, low gate threshold voltage

and high switching speed.

FEATURES

* RDS(ON)<5mΩ @ VGS=10V,ID=0.2A

* High Switching Speed

* Low Input Capacitance(typical 22pF)

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

MMBF170L-AE2-R

MMBF170G-AE2-R

SOT-23

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

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MMBF170G-AE2-R Datasheet(PDF) 1 Page - Unisonic Technologies

MMBF170G-AE2-R Datasheet(HTML) 1 Page - Unisonic Technologies

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