MMDT8050S

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R218-012.a

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

40

V

Collector-Emitter Voltage

25

V

Emitter-Base Voltage

6

V

Collector Current (DC)

800

mA

Collector Current (Pulse)

1.5 (Note 2)

A

Power Dissipation

200 (total) (Note 3)

mW

Junction Temperature

150

°C

Storage Temperature

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. 150mW per element must not be exceeded.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

40

V

Collector-Emitter Breakdown Voltage

25

V

Emitter-Base Breakdown Voltage

6

V

Collector Cut-Off Current

0.5

µA

Emitter Cut-Off Current

0.5

µA

40

60

mV

0.2

0.3

V

Collector-Emitter Saturation Voltage

(Note 1)

0.3

0.5

V

Base-Emitter Voltage

1

V

180

560

40

DC Current Gain

82

Current Gain-Bandwidth Product

150

MHz

Output Capacitance

15

pF

Note: 1. Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.