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15N06L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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15N06L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() 15N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-260.D ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RG=20kΩ) VDGR 60 V Gate-Source Voltage VGSS ±15 V Continuous Drain Current (TC=25°C) ID 15 A Pulsed Drain Current (Note 2) IDM 60 A Avalanche Current (Note 3) IAR 15 A Avalanche Energy Single Pulsed (Note 4) EAS 50 mJ Repetitive (Note 3) EAR 12 mJ Power Dissipation (TA=25°C) TO-220 PD 40 W TO-220F 21 TO-252 28 SOP-8 2.0 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1. 2. 3. 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by safe operating area. Pulse width limited by TJ(MAX),δ<1% Starting TJ=25°C, ID=IAR, VDD=25V THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/ TO-220F θJA 62.5 °C/W TO-252 110 SOP-8 125 Junction to Case TO-220 θJC 3.13 °C/W TO-220F 5.95 TO-252 4.53 SOP-8 62.5 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 60 V Drain-Source Leakage Current IDSS VDS=Max Rating 250 µA Gate-Source Leakage Current IGSS VDS=0V, VGS=±15V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250 µA 1 1.7 2.5 V On State Drain Current ID(ON) VDS>ID(ON)×RDS(ON)MAX, VGS=10V 15 A Static Drain-Source On-Resistance RDS(ON) VGS=5V, ID=7.5A 75 100 mΩ Forward Transconductance (Note 1) gFS VDS>ID(ON)×RDS(ON)MAX, ID=7.5A 3 5 S DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz 700 950 pF Output Capacitance COSS 230 310 pF Reverse Transfer Capacitance CRSS 80 110 pF |
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