25N06L-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

25N06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-450.b

ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

Drain-Source Leakage Current (VGS=0)

IDSS

VDS=Max Rating

µA

VDS= Max Rating×0.8, TC=125°C

Gate- Source Leakage Current (VDS=0)

IGSS

VGS=±20V

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.9

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=12.5A

0.048 0.065

Ω

On State Drain Current

ID(on)

VDS>ID(on) ×RDS(ON)MAX, VGS=10V

Forward Transconductance (Note 1)

gFS

VDS>ID(on) ×RDS(ON)MAX, ID=12.5A

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1MHz

700

900

Output Capacitance

COSS

320 450

Reverse Transfer Capacitance

CRSS

150

SWITCHING PARAMETERS

Total Gate Charge

VDD=40V, VGS=10V, ID=25A

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=30V, ID=3A, RG=50Ω,

VGS=10V

Rise Time

130

Turn-OFF Delay Time

tD(OFF)

VDD=40V, ID=25A, RG=50Ω,

VGS=10V

120

Fall-Time

120

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

ISD=25A, VGS=0V (Note 1)

1.5

Source-Drain Current

ISD

Source-Drain Current (Pulsed) (Note 2)

ISDM

100

Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%.

2. Pulse width limited by safe operating area

25N06L-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies

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