PZT4033G-AA3-R datasheet(2/4 Pages) UTC

2 / 4 page

PZT4033

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R207-002,C

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-80

Collector-Emitter Voltage

VCEO

-80

Emitter-Base Voltage

VEBO

-5

Power Dissipation

Collector Current

-1

Junction Temperature

-65 ~ +150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

θJA

62.5

°C /W

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-10μA,IE=0

-80

Collector-Emitter Breakdown Voltage

BVCEO

IC=-10mA,IB=0

-80

Emitter-Base Breakdown Voltage

BVEBO

IE=-10μA,IC=0

-5

Collector Cut-off Current

ICBO

VCB=-60V, IE=0

-50

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-10

DC Current Gain

hFE

VCE=-5V, IC=-0.1mA

VCE=-5V, IC=-100mA

100

300

VCE=-5V, IC=-500mA

VCE=-5V, IC=-1A

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-150mA, IB=-15mA

-0.15

IC=-500mA, IB=-50mA

-0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-150mA, IB=-15mA

-0.9

IC=-500mA, IB=-50mA

-1.1

Gain Bandwidth Product

VCE= -10V, IC= -50mA, f=1MHz

100

MHz

Output Capacitance

COB

VCB=-10V, IE=0, f=1MHz

Input Capacitance

CIB

VEB=-0.5V, IC=0, f=1MHz

110

Switching Time

Turn-on Time

tON

IC=-500mA, VCE= -30V,

IB1=- IB2=-50mA

100

Storage Time

tSTG

350

Fall Time

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