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UF601G-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UF601G-AE3-R
Description  0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF601G-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UF601
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-699.C
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 2)
VDSS
600
V
Drain-Gate Voltage (Note 2)
VDGX
600
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
0.185
A
Pulsed
IDM
0.740
A
Power Dissipation
PD
0.50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ=+25°C~+150°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
250
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=-5V
600
V
Drain-Source Leakage Current
ID(OFF)
VDS=600V, VGS=-5V
0.1
μA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=3V, ID=8µA
-2.7
-1.5
V
Drain-Source Leakage Current
IDSS
VDS=25V, VGS=0V
7.0
mA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=0V, ID=3mA
600 700
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
f=1.0MHz
9.44
pF
Output Capacitance
COSS
2.28
pF
Reverse Transfer Capacitance
CRSS
1.42
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-5~5V, VDS=30V,
ID=5mA
1.29
nC
Gate to Source Charge
QGS
0.1
nC
Gate to Drain Charge
QGD
0.47
nC
Turn-ON Delay Time
tD(ON)
VGS=-5~5V, VDD=30V,
ID=5mA, RG=20Ω
4
ns
Rise Time
tR
9
ns
Turn-OFF Delay Time
tD(OFF)
14
ns
Fall-Time
tF
84
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=3.0mA, VGS=-10V
1.4
V
Notes: 1. Repetitive rating, pulse width limited by maximum junction temperature.
2. Pulse width≤380μs; duty cycle≤2%.



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