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UF730L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UF730L-TN3-R
Description  5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET
PDF  6 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF730L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UF730
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-077.E
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Drain-Gate Voltage (RGS = 20kΩ) (TJ =25°C ~125°C)
VDGR
400
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
5.5
A
Pulsed Drain Current (Note 1)
IDM
22
A
Single Pulse Avalanche Energy (Note 2)
EAS
300
mJ
TO-220
73
TO-220F
38
Power Dissipation
TO-251 / TO-252
PD
48
W
Junction Temperature
TJ
+150
°
C
Storage Temperature
TSTG
-55 ~ +150
°
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220
62.5
TO-220F
62.5
Junction-to-Ambient
TO-251 / TO-252
θJA
110
°
C/W
TO-220
1.71
TO-220F
3.31
Junction-to-Case
TO-251 / TO-252
θJC
2.6
°
C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
400
V
On-State Drain Current (Note 3)
ID(ON)
VDS > ID(ON) x RDS(ON)MAX,
VGS = 10V
5.5
A
Drain-Source Leakage Current
IDSS
VDS = Rated BVDSS, VGS = 0V
25
μA
Gate-Source Leakage Current
IGSS
VGS = ±20V
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
ID = 3.0A, VGS = 10V
0.8
1.0
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
600
pF
Output Capacitance
COSS
150
pF
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V, f = 1MHz
40
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
10
17
ns
Turn-On Rise Time
tR
20
29
ns
Turn-Off Delay Time
tD(OFF)
35
56
ns
Turn-Off Fall Time
tF
VDD = 200V, ID ≈ 5.5A,
RGS = 12Ω, RL = 35Ω (Note 3, 4)
15
24
ns
Total Gate Charge
QG
20
35
nC
Gate-Source Charge
QGS
3.0
nC
Gate-Drain Charge
QGD
VGS = 10V, ID = 5.5A,
VDS = 0.8 x Rated BVDSS
IG(REF) = 1.5mA
10
nC



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