UF740

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-078,E

PARAMETER

SYMBOL

RATINGS

UNIT

400

V

400

V

Gate to Source Voltage

±20

V

Drain Current

Continuous

10

A

6.3

A

Pulsed

40

A

Power Dissipation

TO-220/TO-263

125

W

TO-220F

44

TO-220F2

46

Derating above 25°C

TO-220/TO-263

1.0

W/°C

TO-220F

0.35

TO-220F2

0.37

Single Pulse Avalanche Energy Rating(Note3)

520

mJ

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220/TO-263

1.0

°C/W

TO-220F

2.86

TO-220F2

2.72

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Drain to Source Breakdown Voltage

400

V

Gate to Threshold Voltage

2.0

4.0

V

On-State Drain Current (Note 1)

10

A

Zero Gate Voltage Drain Current

25

μA

250

μA

Gate to Source Leakage Current

±500 nA

Drain to Source On Resistance

0.47 0.55

Ω

Forward Transconductance

5.8

8.9

S

Turn-On Delay Time

MOSFET Switching Times are Essentially

Independent of Operating Temperature

15

21

ns

Rise Time

25

41

ns

Turn-Off Delay Time

52

75

ns

Fall Time

25

36

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate Charge is Essentially Independent of

Operating Temperature

41

63

nC

Gate to Source Charge

6.5

nC

Gate to Drain “Miller” Charge

23

nC

Input Capacitance

1250

pF

Output Capacitance

300

pF

Reverse - Transfer Capacitance

80

pF