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UK3919-TN3-R Datasheet(PDF) 5 Page - Unisonic Technologies |
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UK3919-TN3-R Datasheet(HTML) 5 Page - Unisonic Technologies |
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5 / 6 page ![]() UK3919 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 5 of 6 www.unisonic.com.tw QW-R502-200.A TYPICAL CHARACTERISTICS(Cont.) di/dt=100A/μs VGS=0V 1 10 100 1000 110 100 1.5 1 0.5 0 0.01 0.1 1 10 100 1000 Diode Forward Current,IF (A) Reverse Recovery Time VS.Diode Forward Current Pulsed 0V VGS=10V Source to Drain Voltage,VF(S-D) (V) Source to Drain Diode Forward Voltage VDD=12.5V RG=25Ω VGS=20 0V IAS≤27A IAS=27A EAS=73mJ 0.01 0.1 1 10 1 10 100 120 100 80 60 40 20 0 25 50 75 100 125 150 VDD=12.5V RG=25Ω VGS=20 0V Starting TCH=25℃ Single Avalanche Energy Derating Factor Starting Channel Temperature,Starting,TCH (℃) Inductive Load,L (mH) Single Avalanche Current vs. Inductive Load |
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