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UT3N01ZG-AL3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT3N01ZG-AL3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD UT3N01Z Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-285.A N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications. FEATURES * RDS(ON) = 3.7Ω @VGS = 4 V * Ultra low gate charge ( typical 1.58 nC ) * Low reverse transfer capacitance ( CRSS = typical 2.3 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness * Halogen-Free SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Pin Assignment Ordering Number Package 1 2 3 Packing UT3N01ZG-AL3-R SOT-323 S G D Tape Reel UT3N01ZG-AN3-R SOT-523 S G D Tape Reel MARKING |
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