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UT4446L-S08-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # UT4446L-S08-R
Description  N-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4446L-S08-R Datasheet(HTML) 3 Page - Unisonic Technologies

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UT4446
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-251.A
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
15
A
Pulsed Drain Current
IDM
40
A
Avalanche Current
IAR
20
A
Repetitive avalanche energy L=0.1mH
EAR
50
mJ
Power Dissipation
PD
3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
59
75
°C/W
Junction-to-Case
θJC
16
24
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=24V, VGS=0V
1
µA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
2.2
3
V
On State Drain Current
ID(ON)
VDS=5V, VGS=10V
40
A
VGS=10V, ID=15A
6.9
8.5
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=11A
11.8
14.5
mΩ
Forward Transconductance
gFS
VDS=5 V, ID=15 A
27
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
1520 1825
pF
Output Capacitance
COSS
306
pF
Reverse Transfer Capacitance
CRSS
VDS=15V, VGS=0V, f=100kHz
214
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
7.2
56
ns
Turn-ON Rise Time
tR
8.2
80
ns
Turn-OFF Delay Time
tD(OFF)
22
392
ns
Turn-OFF Fall-Time
tF
VGS=10V, VDS=15V, RL=1.0Ω,
RG=3Ω
6.7
216
ns
4.5V
17
20
Total Gate Charge
10V
QG
33.7
40
nC
Gate Source Charge
QGS
6.2
nC
Gate Drain Charge
QGD
VDS=15V, VGS=4.5V, ID=15A
10
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A, VGS=0V
0.71
1
V
Maximum Body-Diode Continuous
Current
IS
4
A
Body Diode Reverse Recovery Time
tRR
IF=15A, dI/dt=100A/μs
24
30
ns
Body Diode Reverse Recovery
Charge
QRR
IF=15A, dI/dt=100A/μs
19
nC



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