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UT6302L-AE2-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UT6302L-AE2-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  UT6302 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-363.E ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-0.61A, VGS=0V -1.2 V Maximum Continuous Drain-Source Diode Forward Current IS -0.54 A Maximum Pulsed Drain-Source Diode Forward Current (Note 1) ISM -4.9 A Reverse Recovery Time trr TJ=25°C ,IF=-0.61A, di/dt=100A/µs (Note 2) 35 53 nS Reverse Recovery Charge QRR 26 39 nC Notes: 1. Repetitive Rating; Pulse width limited by TJ(MAX) 2. Pulse Width ≤300μs, Duty Cycle ≤2%. |
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