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UT9435G-S08-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # UT9435G-S08-R
Description  P-CHANNEL ENHANCEMENT MODE
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT9435G-S08-R Datasheet(HTML) 3 Page - Unisonic Technologies

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UT9435
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-155.C
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
-4.2
A
Pulsed Drain Current (Note 1, 2)
IDM
-20
A
SOT-89
1.25
Power Dissipation (Ta=25℃)
SOP-8
PD
2.5
W
Power Dissipation (Tc=25℃)
TO-252
PD
12.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-89
100
TO-252
110
Junction to Ambient (Note 3)
SOP-8
θJA
50
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 uA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VGS= ±20V
±100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25 , I
℃ D=-1mA
-0.1
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-1
-3
V
VGS=-10V, ID=-4A
50
mΩ
Static Drain-Source On-Resistance (Note 2)
RDS(ON)
VGS=-4.5V, ID=-2A
90
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
520
830
pF
Output Capacitance
COSS
180
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=-25V,f=1.0MHz
130
pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 2)
QG
10
16
nC
Gate-Source Charge
QGS
2
nC
Gate-Drain Charge
QGD
VDS=-25V, VGS=-4.5V, ID=-4A
6
nC
Turn-ON Delay Time (Note 2)
tD(ON)
10
48
ns
Turn-ON Rise Time
tR
7
40
ns
Turn-OFF Delay Time
tD(OFF)
26
292
ns
Turn-OFF Fall Time
tF
VDS=-15V,ID=-1A, RG=3.3Ω,
VGS=-10V,RD=15Ω
14
112
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-1A, VGS=0V
-1.3
V
Reverse Recovery Time
tRR
30
ns
Reverse Recovery Charge
QRR
IS=-4A, VGS=0V,
dI/dt=-100A/μs
24
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs , duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board, t≤10s.



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