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UTD452-TN3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UTD452-TN3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD UTD452 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-253.A N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON)< 14mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain Lead-free: UTD452L Halogen-free: UTD452G ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Halogen Free Package 1 2 3 Packing UTD452-TN3-R UTD452L-TN3-R UTD452G-TN3-R TO-252 G D S Tape Reel UTD452-TN3-T UTD452L-TN3-T UTD452G-TN3-T TO-252 G D S Tube ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) |
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