SMD Schottky Barrier Rectifiers

Reverse Voltage: 20 to 100 Volts

Forward Current: 5.0 Amp

RoHS Device

Page 1

REV:A

Features

-Ideal for surface mount applications.

-For use in low

.

voltage, high frequency inventers

-Epitaxial construction.

-Metal-semiconductor junction with guarding.

-High current capability.

-Low forward voltage drop.

Mechanical data

-Case: JEDEC DO-214AA, molded plastic.

-Terminals: Solderable per MIL-STD-750,

method 2026.

-Polarity: Color band denotes cathode end.

-Approx. weight: 0.093 grams

CDBB520-G Thru. CDBB5100-G

Maximum Ratings and Electrical Characteristics

Dimensions in inches and (millimeter)

QW-BB036

CDBB

520-G

2

Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

Comchip Technology CO., LTD.

Max. repetitive peak reverse voltage

Max. DC blocking voltage

Max. RMS voltage

Peak surge forward current, 8.3ms

single half sine-wave superimposed

on rate load (JEDEC method)

Max. instantaneous forward voltage

rated DC blocking voltage

Max. thermal resistance

Max. operating junction temperature

Storage temperature

CDBB

540-G

CDBB

560-G

CDBB

580-G

CDBB

5100-G

Units

Symbol

Parameter

20

20

14

40

40

28

60

60

42

175

5.0

0.70

0.5

20

50

10

-55 to +125

-55 to +150

80

80

56

100

100

70

V

V

V

A

A

V

mA

°C/W

°C

°C

0.55

DO-214AA (SMB)

0.155(3.94)

0.130(3.30)

0.086(2.20)

0.077(1.95)

0.220(5.59)

0.205(5.21)

0.012(0.31)

0.006(0.15)

0.008(0.20)

MAX.

0.060(1.52)

0.030(0.76)

0.096(2.44)

0.084(2.13)

0.180(4.57)

0.160(4.06)

Max. average forward rectified

current at TL=90°C

Max. operating junction temperature

300

P

F

CDBB

530-G

CDBB

550-G

50

50

35

30

30

21

2. Thermal resistance junction to lead.