TIP102

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R209-025.A

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

100

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

5

V

DC

8

A

Collector Current

Pulse

15

A

Base Current

DC

1

A

Collector Power Dissipation

80

W

Junction Temperature

150

°C

Storage Temperature

-65~+150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Emitter Sustaining Voltage

100

V

Collector-Base Cut-Off Current

50

µA

Collector-Emitter Cut-Off Current

50

µA

Emitter-Base Cut-Off Current

2

mA

ON CHARACTERISTICS

1000

20000

DC Current Gain

200

2

V

Collector-Emitter Saturation Voltage

2.5

V

Base-Emitter ON Voltage

2.8

V

SMALL-SIGNAL CHARACTERISTICS

Output Capacitance

300

pF