CDSSC4148N-G

SMD Switching Diode

Page 1

QW-B0049

REV:A

Dimensions in inches and (millimeter)

0805

Features

-Designed for mounting on small surface.

-Silicon Epitaxial Planar Diode.

-Fast switching diode.

Mechanical data

-Case: 0805

-Marking: Cathode Band.

-Weight: 0.006 gram(approx.).

-Lead free

Voltage: 75 V

Current: 150mA

RoHS Device

0.057(1.45)

0.041(1.05)

0.087(2.20)

0.071(1.80)

0.037(0.95)

0.029(0.75)

0.026(0.65)

0.010(0.25)

Parameter

Symbol

Value

Unit

200

mW

Junction Temperature

150

Operating & Storage Temperature Range

-55 to +150

°C

Thermal Resistance Junction to Ambient Air

375

°C/W

°C

1.60

mW/°C

Forward Power Dissipation

Power derating above 25 °C

Parameter

Symbol

Value

Unit

100

V

Repetitive Peak Forward Current at Tamb=25°C

300

Non-Repetitive Surge Forward Current at t<1s and Tj=25°C

500

mA

mA

150

mA

Pepetitive Peak Reverse Voltage

Average rectified current sin half wave rectification with

resistive load

at t≤8.3ms and Tj=25°C

1000

mA

1.) Valid provided that components are kept at ambient temperature.

Parameter

Symbol

Value

Unit

1.0

V

4

Trr

ns

4

pF

1.25

V

MAX. Forward Voltage

0.025

uA

5

uA

MAX. Leakage Current

Notes: