SPL CGxx

(SFH 4804x2)

Semiconductor Group

2

Characteristics

(T

Parameter

Symbol

Values

Unit

min.

typ.

max.

Emission wavelength

1)

λ

peak

803

840

935

808

850

940

813

860

945

nm

Spectral width (FWHM)

1)

∆λ

2nm

Output power

2)

P

opt

1.0

W

Differential efficiency

2)

808 nm

850 nm

940 nm

η

0.75

0.75

0.70

0.95

0.85

0.80

1.1

1.0

0.9

W/A

Threshold current

808 nm

850 nm

940 nm

I

th

0.40

0.30

0.30

0.45

0.40

0.35

0.55

0.50

0.40

A

Operating current

1)

808 nm

850 nm

940 nm

I

op

1.3

1.3

1.4

1.5

1.5

1.6

1.8

1.8

1.8

A

Operating voltage

1)

V

op

2.0

V

Differential series resistance

r

s

–

0.2

0.4

Ω

Characteristic temperature (threshold)

3)

T

0

150

K

Temperature coefficient of operating

current

∂I

0.5

%/K

Temperature coefficient of wavelength

4)

∂λ / ∂T

0.25

0.27

0.30

nm/K

Thermal resistance (junction

→ heat sink)

R

th JA

10

K/W

1) Standard operating conditions refer to 1 W cw measured with NA = 0.6

2) Optical power measurements refer to a detector with NA = 0.6

3) Model for the thermal behavior of threshold current: I

4) Depending on emission wavelength