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MD7IC21100N Datasheet(PDF) 21 Page - Freescale Semiconductor, Inc

Part # MD7IC21100N
Description  RF LDMOS Wideband Integrated Power Amplifiers
PDF  22 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MD7IC21100N Datasheet(HTML) 21 Page - Freescale Semiconductor, Inc

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MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
21
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2008
• Initial Release of Data Sheet
1
June 2011
• Changed ESD Human Body Model rating from Class 1C to Class 0 to reflect recent ESD test results of the
device, p. 2
• Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
• Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Fig. 13 and
Fig. 14 after Fig. 13 removed)
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages to
Product Documentation, Application Notes, p. 21
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 21
2
Feb. 2012
• Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
• Corrected bias conditions throughout the data sheet to reflect the true testing methodology.
Changed IDQ1A =IDQ1B = 190 mA to IDQ1A +IDQ1B = 190 mA and changed IDQ2A =IDQ2B = 925 mA to
IDQ2A +IDQ2B = 925 mA.
• Removed Fig. 5, Possible Circuit Topologies, and renumbered all subsequent figures, p. 5--10



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