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MD7IC21100N Datasheet(PDF) 21 Page - Freescale Semiconductor, Inc |
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MD7IC21100N Datasheet(HTML) 21 Page - Freescale Semiconductor, Inc |
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21 / 22 page ![]() MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 21 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Oct. 2008 • Initial Release of Data Sheet 1 June 2011 • Changed ESD Human Body Model rating from Class 1C to Class 0 to reflect recent ESD test results of the device, p. 2 • Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools. • Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Fig. 13 and Fig. 14 after Fig. 13 removed) • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages to Product Documentation, Application Notes, p. 21 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 21 2 Feb. 2012 • Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 • Corrected bias conditions throughout the data sheet to reflect the true testing methodology. Changed IDQ1A =IDQ1B = 190 mA to IDQ1A +IDQ1B = 190 mA and changed IDQ2A =IDQ2B = 925 mA to IDQ2A +IDQ2B = 925 mA. • Removed Fig. 5, Possible Circuit Topologies, and renumbered all subsequent figures, p. 5--10 |
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