CY7C1386D_12 datasheet(21/34 Pages) CYPRESS

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CY7C1386D

CY7C1387D

Document Number: 38-05545 Rev. *J

Page 21 of 34

IDD

VDD operating supply current

VDD = Max.,

IOUT = 0 mA,

f = fMAX = 1/tCYC

5 ns cycle, 200 MHz

–

300

6 ns cycle, 167 MHz

–

275

ISB1

Automatic CE power-down

current – TTL inputs

VDD = Max,

device deselected,

VIN  VIH or VIN  VIL

f = fMAX = 1/tCYC

5 ns cycle, 200 MHz

–

150

6 ns cycle, 167 MHz

–

140

ISB2

Automatic CE power-down

current – CMOS inputs

VDD = Max,

device deselected,

VIN  0.3 V or

VIN > VDDQ – 0.3 V,

f = 0

All speeds

–

ISB3

Automatic CE power-down

current – CMOS inputs

VDD = Max,

device deselected, or

VIN  0.3 V or

VIN > VDDQ – 0.3 V

f = fMAX = 1/tCYC

5 ns cycle, 200 MHz

–

130

6 ns cycle, 167 MHz

–

125

ISB4

Automatic CE power-down

current – TTL inputs

VDD = Max,

device deselected,

VIN  VIH or VIN  VIL,

f = 0

All speeds

–

Capacitance

Parameter[16]

Description

Test Conditions

100-pin TQFP

Max

165-ball FBGA

Max

Unit

CIN

Input capacitance

TA = 25 C, f = 1 MHz,

VDD = 3.3 V, VDDQ = 2.5 V

CCLK

Clock input capacitance

CIO

I/O capacitance

Electrical Characteristics (continued)

Over the Operating Range

Parameter [14, 15]

Description

Test Conditions

Min

Max

Unit

Thermal Resistance

Parameter[16]

Description

Test Conditions

100-pin TQFP

Package

165-ball FBGA

Package

Unit



Thermal resistance

(junction to ambient)

Test conditions follow standard test methods

and

procedures

for

measuring

thermal

impedance, in accordance with EIA/JESD51.

28.66

20.7

°C/W



Thermal resistance

(junction to case)

4.08

4.0

°C/W

Note

16. Tested initially and after any design or process change that may affect these parameters.

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