AP2501 datasheet(4/18 Pages) DIODES

4 / 18 page

AP2501/AP2511

Document number: DS35577 Rev. 5 - 2

4 of 18

www.diodes.com

August 2012

AP2501/AP2511

Electrical Characteristics (@ TA = +25°C, VIN = +5.0V, CIN = 0.1µF, CL = 1µF, unless otherwise specified.)

Symbol

Parameter

Conditions (Note 6)

Min

Typ

Max

Unit

VUVLO

Input UVLO

VIN Rising

1.6

2.0

2.4

ΔV

UVLO

Input UVLO Hysteresis

VIN Decreasing

ISHDN

Input Shutdown Current

Disabled, OUT = Open

0.1

1.0

µA

Input Quiescent Current

Enabled, OUT = Open

100

µA

ILEAK

Input Leakage Current

Disabled, OUT Grounded

0.1

1.0

µA

IREV

Reverse Leakage Current

Disabled, VIN = 0V, VOUT = 5V, IREV at VIN

0.01

1.00

µA

RDS(ON)

Switch on-resistance

VIN = 5V, IOUT = 1A

TA = +25°C

Ω

-40°C

≤ T

A ≤ +85°C

105

VIN = 3.3V, IOUT = 1A

TA = +25°C

108

-40°C

≤ T

A ≤ +85°C

135

ILIMIT

Over-Load Current Limit (Note 7)

VIN = 5V, VOUT = 4.5V

-40°C

≤ T

A ≤ +85°C

2.8

3.7

4.6

ITRIG

Current Limiting Trigger Threshold

Output Current Slew rate (<100A/s)

3.7

ISHORT

Short-Circuit Current Limit

Enabled into short circuit

3.7

TSHORT

Short-Circuit Response Time

VOUT = 0V to IOUT = ILIMIT (OUT shorted to ground)

µs

VIL

EN Input Logic Low Voltage

VIN = 2.7V to 5.5V

0.8

VIH

EN Input Logic High Voltage

VIN = 2.7V to 5.5V

ILEAK-EN

EN Input Leakage

VIN = 5V, VEN = 0V and 5.5V

0.01

1.00

µA

ILEAK-O

Output Leakage Current

Disabled, VOUT = 0V

0.5

µA

TD(ON)

Output Turn-On Delay Time

CL = 1µF, RLOAD = 5Ω

0.1

Output Turn-On Rise Time

CL = 1µF, RLOAD = 5Ω

0.6

1.5

TD(OFF)

Output Turn-Off Delay Time

CL = 1µF, RLOAD = 5Ω

0.1

Output Turn-Off Fall Time

CL = 1µF, RLOAD = 5Ω

0.05

0.10

RFLG

FLG Output FET On-Resistance

IFLG = 10mA

Ω

IFOH

FLG Off Current

VFLG = 5V

0.01

1.00

µA

TBLANK

FLG Blanking Time

Assertion or deassertion due to overcurrent and

over-temperature condition

TDIS

Discharge Time

CL= 1µF, VIN = 5V, disabled to VOUT < 0.5V

0.6

RDIS

Discharge Resistance (Note 7)

VIN = 5V, disabled, IOUT = 1mA

100

Ω

TSHDN

Thermal Shutdown Threshold

Enabled

140

°C

THYS

Thermal Shutdown Hysteresis

°C

Thermal Resistance Junction-to-

Ambient

SO-8 (Note 8)

°C/W

MSOP-8 (Note 8)

130

°C/W

MSOP-8EP (Note 9)

°C/W

U-DFN3030-8 Type E (Note 9)

°C/W

Notes:

6. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

7. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when VIN < VUVLO). The

discharge function offers a resistive discharge path for the external storage capacitor for limited time.

8. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.

9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground

plane.

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