BYG50D datasheet(2/3 Pages) TAYCHIPST

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ELECTRICAL CHARACTERISTICS

THERMAL CHARACTERISTICS

Notes

1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper

≥40 µm, see Fig.7.

For more information please refer to the

“General Part of associated Handbook”.

ERSM

non-repetitive peak reverse avalanche

energy

L = 120 mH; Tj =Tj max prior to

surge; inductive load switched off

BYG50D to J

−

BYG50K and M

−

Tstg

storage temperature

−65

+175

°C

junction temperature

see Fig.4

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF =1A; Tj =Tj max; see Fig.5

−−

0.85

IF = 1 A; see Fig.5

−−

1.00

V(BR)R

reverse avalanche

breakdown voltage

IR = 0.1 mA

BYG50D

300

−−

BYG50G

500

−−

BYG50J

700

−−

BYG50K

900

−−

BYG50M

1100

−−

reverse current

VR =VRRMmax; see Fig.6

−−

µA

VR =VRRMmax; Tj = 165 °C; see Fig.6

−−

100

µA

trr

reverse recovery time

when switched from IF = 0.5 A to

IR = 1 A; measured at IR = 0.25 A;

see Fig.8

−

µs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

note 2

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

200V-1000V

0.7A-2.1A

Controlled avalanche rectiﬁers

BYG50D THRU BYG50M

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