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SST36VF1601 Datasheet(PDF) 13 Page - Silicon Storage Technology, Inc |
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SST36VF1601 Datasheet(HTML) 13 Page - Silicon Storage Technology, Inc |
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13 / 26 page ![]() Data Sheet 16 Mbit Concurrent SuperFlash SST36VF1601 13 ©2001 Silicon Storage Technology, Inc. S71142-06-000 11/01 373 AC CHARACTERISTICS TABLE 12: READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V Symbol Parameter SST36VF1601-70 Units Min Max TRC Read Cycle Time 70 ns TCE Chip Enable Access Time 70 ns TAA Address Access Time 70 ns TOE Output Enable Access Time 35 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 ns TOLZ1 OE# Low to Active Output 0 ns TCHZ1 CE# High to High-Z Output 20 ns TOHZ1 OE# High to High-Z Output 20 ns TOH1 Output Hold from Address Change 0 ns TRP1 RST# Pulse Width 500 ns TRHR1 RST# High before Read 50 ns TRY1,2 2. This parameter applies to Sector-Erase, Block-Erase and Program operations. This parameter does not apply to Chip-Erase opera- tions. RST# Pin Low to Read Mode 150 µs T12.9 373 TABLE 13: PROGRAM/ERASE CYCLE TIMING PARAMETERS Symbol Parameter Min Max Units TBP Word-Program Time 20 µs TAS Address Setup Time 0 ns TAH Address Hold Time 40 ns TCS WE# and CE# Setup Time 0 ns TCH WE# and CE# Hold Time 0 ns TOES OE# High Setup Time 0 ns TOEH OE# High Hold Time 10 ns TCP CE# Pulse Width 40 ns TWP WE# Pulse Width 40 ns TWPH1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. WE# Pulse Width High 30 ns TCPH1 CE# Pulse Width High 30 ns TDS Data Setup Time 30 ns TDH1 Data Hold Time 0 ns TIDA1 Software ID Access and Exit Time 150 ns TSE Sector-Erase 25 ms TBE Block-Erase 25 ms TSCE Chip-Erase 100 ms TBY1 RY/BY# Delay Time 90 ns TBR Bus Recovery Time 1 µs T13.6 373 |
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