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ATP206 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ATP206 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 7 page ![]() ATP206 No. A1395-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 40 V Zero-Gate Voltage Drain Current IDSS VDS=40V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=20A 915 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=20A, VGS=10V 12 16 mΩ RDS(on)2 ID=10A, VGS=4.5V 20 28 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 1630 pF Output Capacitance Coss 205 pF Reverse Transfer Capacitance Crss 110 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr 110 ns Turn-OFF Delay Time td(off) 83 ns Fall Time tf 73 ns Total Gate Charge Qg VDS=20V, VGS=10V, ID=40A 27 nC Gate-to-Source Charge Qgs 7.0 nC Gate-to-Drain “Miller” Charge Qgd 5.2 nC Diode Forward Voltage VSD IS=40A, VGS=0V 0.99 1.2 V Switching Time Test Circuit Ordering Information Device Package Shipping memo ATP206-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P.G 50Ω G S D ID=20A RL=1Ω VDD=20V VOUT ATP206 VIN 10V 0V VIN |
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