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ATP207 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ATP207
Description  General-Purpose Switching Device Applications
PDF  7 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP207 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ATP207
No. A1319-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
40
V
Zero-Gate Voltage Drain Current
IDSS
VDS=40V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=33A
12
20
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=33A, VGS=10V
7
9.1
mΩ
RDS(on)2
ID=17A, VGS=4.5V
11
15.5
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
2710
pF
Output Capacitance
Coss
330
pF
Reverse Transfer Capacitance
Crss
220
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
27
ns
Rise Time
tr
290
ns
Turn-OFF Delay Time
td(off)
170
ns
Fall Time
tf
110
ns
Total Gate Charge
Qg
VDS=20V, VGS=10V, ID=65A
54
nC
Gate-to-Source Charge
Qgs
14
nC
Gate-to-Drain “Miller” Charge
Qgd
11
nC
Diode Forward Voltage
VSD
IS=65A, VGS=0V
1.0
1.2
V
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
ATP207-TL-H
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=33A
RL=0.61Ω
VDD=20V
VOUT
ATP207
VIN
10V
0V
VIN



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