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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Low rDS(on) Small-Signal MOSFETs

TMOS Single P-Channel

Field Effect Transistors

Part of the GreenLine

™ Portfolio of devices with energy–

conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s

High Cell Density, HDTMOS process. Low rDS(on) assures

minimal power loss and conserves energy, making this device

ideal for use in space sensitive power management circuitry.

Typical applications are dc–dc converters and power manage-

ment in portable and battery–powered products such as

computers, printers, PCMCIA cards, cellular and cordless

telephones.

• Low rDS(on) Provides Higher Efficiency and Extends Battery

Life

• Miniature SOT–23 Surface Mount Package Saves Board Space

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

20

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 25°C

ID

IDM

750

2000

mA

Total Power Dissipation @ TA = 25°C

PD

225

mW

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Thermal Resistance — Junction–to–Ambient

R

θJA

625

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MGSF1P02LT1

7

″

8mm embossed tape

3000

MGSF1P02LT3

13

″

8mm embossed tape

10,000

GreenLine is a trademark of Motorola, Inc.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Order this document

by MGSF1P02LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

CASE 318–08, Style 21

SOT–23 (TO–236AB)

MGSF1P02LT1

P–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET

Motorola Preferred Device

™

1

2

3

3 DRAIN

1

GATE

2 SOURCE

™