SSM3K15AMFV datasheet(2/5 Pages) TOSHIBA

2 / 5 page

SSM3K15AMFV

2010-11-29

Electrical characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

V (BR) DSS

ID = 0.1 mA, VGS = 0 V

⎯

Drain-Source breakdown voltage

V (BR) DSX

ID = 0.1 mA, VGS = -10 V (Note 3)

⎯

Drain cut-off current

IDSS

VDS = 30 V, VGS = 0 V

⎯

μA

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±1

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.8

⎯

1.5

Forward transfer admittance

|Yfs|

VDS = 3 V, ID = 10 mA

(Note 2)

⎯

ID = 10 mA, VGS = 4 V

(Note 2)

⎯

2.3

3.6

Drain-Source ON-resistance

RDS (ON)

ID = 10 mA, VGS = 2.5 V

(Note 2)

⎯

3.5

6.0

Input capacitance

Ciss

⎯

13.5

⎯

Output capacitance

Coss

⎯

8.0

⎯

Reverse transfer capacitance

Crss

VDS = 3 V, VGS = 0 V, f = 1 MHz

⎯

6.5

⎯

Turn-on time

ton

⎯

5.5

⎯

Switching time

Turn-off time

toff

VDD = 5 V, ID = 10 mA

VGS = 0 to 5 V, RG = 50 Ω

⎯

Drain-source forward voltage

VDSF

ID = -100 mA, VGS = 0 V

(Note 2)

⎯

-0.85

-1.2

Note 2: Pulse test

Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the

drain-source breakdown voltage is lowered in this mode.

Switching Time Test Circuit

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 0.1 mA for this

product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage

than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )

Please take this into consideration for using the device.

Do not use this device under avalanche mode. It may cause the device to break down.

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness

and pad area. When using this device, please take heat dissipation into consideration

(a) Test circuit

VDD = 5 V

RG = 50 Ω

Duty

≤ 1%

VIN: tr, tf < 5 ns

Common source

= 25°C

(b) VIN

5 V

ton

toff

0 V

VDD

VDS (ON)

10%

90%

10%

5 V

OUT

VDD

μs

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