RN1907AFS~RN1909AFS

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

RN1907AFS, RN1908AFS, RN1909AFS

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

• Two devices are incorporated into a fine-pitch, small-mold (6-pin)

package.

• Incorporating a bias resistor into a transistor reduces the parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers the assembly cost.

• Complementary to the RN2907AFS~RN2909AFS

Equivalent Circuit and Bias Resistor Values

(Q1, Q2 common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1907AFS~RN1909AFS

50

V

RN1907AFS

6

RN1908AFS

7

Emitter-base voltage

RN1909AFS

15

V

Collector current

80

mA

Collector power dissipation

50

mW

Junction temperature

150

°C

Storage temperature range

RN1907AFS~RN1909AFS

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1F1D

Weight: 0.001 g (typ.)

R1

B

C

E

Type No.

R1 (k

Ω)

R2 (k

Ω)

RN1907AFS

10

47

RN1908AFS

22

47

RN1909AFS

47

22

Equivalent Circuit

(top view)

fS6

1. EMITTER1

2. BASE1

3. COLLECTOR2

4. EMITTER2

5. BASE2

6. COLLECTOR1

(E1)

(B1)

(C2)

(E2)

(B2)

(C1)

0.1±0.05

6

0.8±0.05

1.0±0.05

1

2

0.1±0.05

3

5

4

6

5

4

1

2

3

Q1

Q2