RN1907FE~RN1909FE

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

RN1907FE, RN1908FE, RN1909FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

• Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

• Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

• Complementary to RN2907FE~RN2909FE

Equivalent Circuit and Bias Resistor Values

(Q1, Q2 common)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1907FE~

RN1909FE

50

V

RN1907FE

6

RN1908FE

7

Emitter-base voltage

RN1909FE

15

V

Collector current

100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN1907FE~

RN1909FE

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2N1G

Weight: 0.003 g (typ.)

Equivalent Circuit

(top view)

6

5

4

1

2

3

Q1

Q2

R1

B

C

E

Type No.

R1 (k

Ω)

R2 (k

Ω)

RN1907FE

10

47

RN1908FE

22

47

RN1909FE

47

22