DSF01S30SC

2009-12-03

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

DSF01S30SC

High-Speed Switching Application

Characteristic

Symbol

Rating

Unit

Reverse voltage

30

V

Average forward current

100*

mA

Surge current (10ms)

2

A

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad

dimensions of 4 × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Forward voltage

―

―

0.27

0.3

V

Forward voltage

―

―

0.41

0.5

V

Reverse current

―

―

―

7

μA

Reverse current

―

―

―

50

μA

Total capacitance

―

⎯

9.3

⎯

pF

Marking

JEDEC

―

JEITA

―

TOSHIBA

1-1R1A

Weight: 0.17 mg (typ.)

Unit: mm

0.27±0.02

１

２

0.32±0.03

0.025±0.015

１： CATHODE

２： ANODE

SC2