ACE9435B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench

technology, which is especially used to minimize on-state resistance. This device is particularly suited for

low voltage application such as portable equipment, power management and other battery powered

circuits, and low in-line power loss are needed in a very small outline surface mount package.

Features

DS

DS(ON)

=51m

Ω @ V

DS(ON)

=68

mΩ @ V

DS(ON)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Drain Current

(Note 1)

-5.2

A

Pulsed

(Note 2)

-50

Total Power Dissipation

(Note 1)

1.5

W

Operating and Storage Temperature Range

Packaging Type

SOP-8

8

7

6

5

1

2

3

4