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ST10F276E Datasheet(PDF) 185 Page - STMicroelectronics

Part # ST10F276E
Description  16-bit MCU with MAC unit 832 Kbyte Flash memory and 68 Kbyte RAM
PDF  235 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST10F276E Datasheet(HTML) 185 Page - STMicroelectronics

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ST10F276E
Electrical characteristics
Doc ID 12303 Rev 3
185/235
.
Bank 0 erase (384 Kbyte)(3)
8.2
5.8
20.2
17.7
28.6
26.1
s
not preprogrammed
preprogrammed
Bank 1 erase (128 Kbyte)(3)
3.0
2.2
7.0
6.2
9.8
9.0
s
not preprogrammed
preprogrammed
Bank 2 erase (192 Kbyte)(3)
4.3
3.1
10.3
9.1
14.5
13.3
s
not preprogrammed
preprogrammed
Bank 3 erase (128 Kbyte)(3)
3.0
2.2
7.0
6.2
9.8
9.0
s
not preprogrammed
preprogrammed
I-Module erase (512 Kbyte)(4)
11.2
7.6
27.2
23.5
38.4
34.7
s
not preprogrammed
preprogrammed
X-Module erase (320 Kbyte)(4)
7.3
4.9
17.3
14.8
24.3
21.8
s
not preprogrammed
preprogrammed
Chip erase (832 Kbyte)(5)
18.5
12.0
44.4
37.9
62.6
56.1
s
not preprogrammed
preprogrammed
Recovery from power-down (tPD)
-
40
40
μs
(6)
Program suspend latency(6)
-10
10
μs
Erase suspend latency(6)
-30
30
μs
Erase suspend request rate(6)
20
20
20
ms
Min delay between two
requests
Set protection(6)
40
170
170
µs
1.
The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
2.
Word and Double Word Programming times are provided as average value derived from a full sector programming time:
Absolute value of a Word or Double Word Programming time could be longer than the provided average value.
3.
Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the bank).
4.
Module Erase is obtained through a sequence of two Bank Erase operations (since each module is composed of two
banks).
5.
Chip Erase is obtained through a sequence of two Module Erase operations on I- and X-Module.
6.
Not 100% tested, guaranteed by design characterization
Table 91.
Flash characteristics (continued)
Parameter
Typical
TA = 25°C
Maximum
TA = 125°C
Unit
Notes
0 cycles(1)
0 cycles(1)
100k cycles
Table 92.
Data retention characteristics
Number of program / erase cycles
(-40°C < TA < 125°C)
Data retention time
(average ambient temperature 60°C)
832 Kbyte
(code store)
64 Kbyte
(EEPROM emulation)(1)
0 - 100
> 20 years
> 20 years
1000
-
> 20 years
10000
-
10 years
100000
-
1 year



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