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STTH4R02-Y Datasheet(PDF) 1 Page - STMicroelectronics |
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STTH4R02-Y Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  December 2010 Doc ID 17391 Rev 1 1/9 9 STTH4R02-Y Automotive ultrafast recovery diode Features ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature ■ AEC-Q101 qualified Description The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged SMB, SMC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection in automotive applications. Table 1. Device summary Symbol Value IF(AV) 4 A VRRM 200 V Tj (max) 175 °C VF (typ) 0.76 V trr (typ) 16 ns K A K A SMB STTH4R02UY SMC STTH4R02SY www.st.com |
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