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STTH3010-Y Datasheet(PDF) 2 Page - STMicroelectronics |
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STTH3010-Y Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STTH3010-Y 2/9 Doc ID 018923 Rev 1 1 Characteristics To evaluate the conduction losses use the following equation: P = 1.3 x IF(AV) + 0.013 IF 2 (RMS) Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1000 V IF(RMS) Forward rms current 50 A IF(AV) Average forward current, δ = 0.5 DO-247 Tc = 105 °C 30 A D2PAK Tc = 105 °C IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square 300 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -40 to +175 °C Table 3. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case DO-247 1.1 °C/W D2PAK Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM 15 µA Tj = 125 °C 10 100 VF (2) Forward voltage drop Tj = 25 °C IF = 30 A 2 V Tj = 100 °C 1.4 1.8 Tj = 150 °C 1.3 1.7 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% |
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