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IR11672AS Datasheet(PDF) 13 Page - International Rectifier

Part # IR11672AS
Description  ADVANCED SMART RECTIFIER TM CONTROL IC
PDF  25 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IR11672AS Datasheet(HTML) 13 Page - International Rectifier

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IR11672AS
www.irf.com
© 2009-2011 International Rectifier
13
General Description
The IR11672A Smart Rectifier IC can emulate the operation of diode rectifier by properly driving a
Synchronous Rectifier (SR) MOSFET. The direction of the rectified current is sensed by the input comparator
using the power MOSFET RDSon as a shunt resistance and the GATE pin of the MOSFET is driven
accordingly. Internal blanking logic is used to prevent spurious transitions and guarantee operation in
continuous (CCM), discontinuous (DCM) and critical (CrCM) conduction mode.
IR11672A is suitable for Flyback and Resonant Half-Bridge topologies.
VGate
VTH1
VTH2
VTH3
VDS
Figure 1: Input comparator thresholds
Flyback Application
The modes of operation for a Flyback circuit differ mainly for the turn-off phase of the SR switch, while the
turn-on phase of the secondary switch (which corresponds to the turn off of the primary side switch) is
identical.
Turn-on phase
When the conduction phase of the SR FET is initiated, current will start flowing through its body diode,
generating a negative VDS voltage across it. The body diode has generally a much higher voltage drop than the
one caused by the MOSFET on resistance and therefore will trigger the turn-on threshold VTH2.
At that point the IR11672A will drive the gate of MOSFET on which will in turn cause the conduction voltage
VDS to drop down. This drop is usually accompanied by some amount of ringing, that can trigger the input
comparator to turn off; hence,
a Minimum On Time (MOT) blanking period is used that will maintain the
power MOSFET on for a minimum amount of time.
The programmed MOT will limit also the minimum duty cycle of the SR MOSFET and, as a consequence, the
max duty cycle of the primary side switch.
DCM/CrCM Turn-off phase
Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level
where VDS will cross the turn-off threshold VTH1. This will happen differently depending on the mode of
operation.
In DCM the current will cross the threshold with a relatively low dI/dt. Once the threshold is crossed, the
current will start flowing again thru the body diode, causing the VDS voltage to jump negative. Depending on
the amount of residual current, VDS may trigger once again the turn on threshold: for this reason VTH2 is
blanked for a certain amount of time (TBLANK) after VTH1 has been triggered.
The blanking time is internally set. As soon as VDS crosses the positive threshold VTH3 also the blanking time is
terminated and the IC is ready for next conduction cycle.



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