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FDY102PZ Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # FDY102PZ
Description  Single P-Channel (??.5 V) Specified PowerTrench짰 MOSFET ??0 V, ??.83 A, 0.5 
PDF  7 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDY102PZ Datasheet(HTML) 4 Page - Fairchild Semiconductor

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4
Figure 7.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
Qg, GATE CHARGE (nC)
ID = -0.83 A
VDD = -12 V
VDD = -10 V
VDD = -8 V
Gate Charge Characteristics
Figure 8.
0.1
1
10
1
10
100
f = 1 MHz
VGS = 0 V
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
20
500
Capacitance vs Drain
to Source Voltage
Figure 9. Gate Leakage Current
vs Gate to
03
69
12
15
10
-3
10
-1
10
1
10
3
10
5
VGS = 0 V
TJ = 25 oC
TJ = 125 oC
-VGS, GATE TO SOURCE VOLTAGE (V)
Source Voltage
Figure 10.
0.1
1
10
0.01
0.1
1
10 ms
1 s
DC
100 ms
10 ms
1 ms
-VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
RTJA = 280
oC/W
TA = 25
oC
60
2
Forward Bias Safe
Operating Area
Figure 11. Single Pulse Maximum Power Dissipation
10
-3
10
-2
10
-1
10
0
10
1
100
1000
1
10
V
GS = -4.5 V
SINGLE PULSE
RTJA = 280
o
C/W
T
A = 25
o
C
t, PULSE WIDTH (sec)
30
0.2
Typical Characteristics T
J = 25 °C unless otherwise noted
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2



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