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BDT63 Datasheet(PDF) 4 Page - Comset Semiconductor |
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BDT63 Datasheet(HTML) 4 Page - Comset Semiconductor |
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4 / 5 page ![]() BDT63-A-B-C 26/09/2012 COMSET SEMICONDUCTORS 4 | 5 SEMICONDUCTORS ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Min Typ Max Unit VBE(on) Base-Emitter Voltage (*) IC= 3 A, VCE= 3 V BDT63 - - 2.5 V BDT63A BDT63B BDT63C hFE DC Current Gain (*) VCE= 3.0 V, IC= 3 A BDT63 1000 - - - BDT63A BDT63B BDT63C VCE= 3.0 V, IC= 10 A BDT63 - 3000 - BDT63A BDT63B BDT63C VECF C-E Diode Forward Voltage IF= 3 A BDT63 - - 2 V BDT63A BDT63B BDT63C COB Output Capacitance IE= 0, VCB = 10 V ftest= 1MHz BDT63 - 100 - pF BDT63A BDT63B BDT63C SWITCHING TIMES Symbol Ratings Test Condition(s) Min Typ Max Unit ton turn-on time IC= 3 A , VCC= 10 V IB1 = -IB2 = 12 mA - 1 2.5 µs toff turn-off time - 5 10 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
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