IRF640 datasheet(2/3 Pages) COMSET

2 / 3 page

IRF640

2/3

09/11/2012

COMSET SEMICONDUCTORS

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VDSS

Drain-Source Breakdown

Voltage

ID= 250 µA, VGS= 0 V

200

VGS(th)

Gate-threshold Voltage

ID= 250 µA, VGS= VDS

IDSS

Zero Gate Voltage Drain

Current

VDS= 200 V, VGS= 0 V

Tj= 25 °C

µA

VDS= 200 V, VGS= 0 V

Tj= 125 °C

250

IGSS

Gate-Source leakage

Current

VGS= 20 V, VDS= 0 V

100

RDS(on)

Drain-Source on Resistance

ID= 10 A, VGS= 10 V

0.15

0.18

Ω

DYNAMIC CHARACTERISTICS

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

gfs

Transconductance

VDS = 2*ID*RDS(on)max

ID= 9 A

CISS

Input Capacitance

VGS= 0 V, VDS= 25 V

f= 1MHz

1200

1560

COSS

Output Capacitance

200

260

CRSS

Reverse transfer

Capacitance

td(on)

Turn-on Delay Time

VDD= 100 V,

ID= 18 A, RGS= 25 Ω

Rise time

145

300

td(off)

Turn-off Delay Time

145

300

Fall Time

110

230

REVERSE DIODE

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

Inverse Diode Continuous

Forward Current.

TC = 25°C

ISM

Inverse diode direct current,

pulsed.

TC = 25°C

VSD

Inverse Diode Forward

voltage

VGS = 0 V, IF = 18 A

Trr

Reverse Recovery Time

VR = 25 V, IF = 18 A

di/dt = 100 A/µs, TC =

150°C

130

Qrr

Reverse Recovery Charge

0.8

µC

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