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MSS40 Datasheet(PDF) 3 Page - Comset Semiconductor |
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MSS40 Datasheet(HTML) 3 Page - Comset Semiconductor |
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3 / 4 page  MSS40 / MSS50 Series 29/10/2012 COMSET SEMICONDUCTORS 3 | 4 SEMICONDUCTORS ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Test Conditions Min Typ Max Unit IDRM VDRM = VDRM Rated Tj = 25 °C MSS40 - - 20 µA MSS50 Tj = 125 °C MSS40 - - 10 mA MSS50 IRRM VRRM = VRRM Rated Tj = 25 °C MSS40 - - 20 µA MSS50 Tj = 125 °C MSS40 - - 10 mA MSS50 IGT VD = 12 V, RL = 33 Ω MSS40 5 - 50 mA MSS50 VGT VD = 12 V, RL = 33 Ω MSS40 - - 1.3 V MSS50 VGD VD = VDRM, RL = 3.3 kΩ Tj = 125 °C MSS40 0.2 - - V MSS50 IH IT = 500 mA Gate open MSS40 - - 80 mA MSS50 VTM ITM = 80A tp = 380 µs Tj = 25 °C MSS40 - - 1.7 V ITM = 100A tp = 380 µs MSS50 - - 1.7 IL IG = 1.2xIGT MSS40 - - 120 mA MSS50 dV/dt VD = 67% VDRM Gate open Tj = 125 °C MSS40 1000 - - V/µs MSS50 Vt0 Threshold voltage Tj = 125 °C MSS40 - - 0.85 V MSS50 Rd Dynamic resistance Tj = 125 °C MSS40 - - 11 m Ω MSS50 - - 7 |
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