H02N65 datasheet(2/6 Pages) HSMC

2 / 6 page

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200910

Issued Date : 2009.04.07

Revised Date :

Page No. : 2/6

H02N60E, H02N60F

HSMC Product Specification

Thermal Characteristics

Symbol

Parameter

Value

Units

TO-220AB

2.87

RθJC

Thermal Resistance Junction to Case Max.

TO-220FP

5.5

°C/W

RθJA

Thermal Resistance Junction to Ambient Max.

62.5

°C/W

ELectrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol

Characteristic

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)

650

Drain-Source Leakage Current (VDS=650V, VGS=0V)

IDSS

Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)

IGSSF

Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)

100

IGSSR

Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)

-100

VGS(th)

Gate Threshold Voltage (VDS=VGS, ID=250uA)

RDS(on)

Static Drain-Source On-Resistance (VGS=10V, ID=1A)*

4.6

gFS

Forward Transconductance (VDS≥50V, ID=1A)*

mhos

Ciss

Input Capacitance

300

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VGS=0V, VDS=25V, f=1MHz

td(on)

Turn-on Delay Time

Rise Time

td(off)

Turn-off Delay Time

Fall Time

(VDD=300V, ID=2A, RG=25Ω,

VGS=10V)*

Total Gate Charge

9.3

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

(VDS=300V, ID=2A, VGS=10V)*

3.3

*: Pulse Test: Pulse Width

≤300us, Duty Cycle≤2%

Source-Drain Diode

Symbol

Characteristic

Min.

Typ.

Max.

Units

VSD

Forward On Voltage(1)

IS=2A, VGS=0V, TJ=25

1.4

trr

Reverse Recovery Time

235

Qrr

Reverse Recovery Charge

IS=2A, VGS=0V, dIS/dt=100A/us

1.0

**: Negligible, Dominated by circuit inductance

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