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DTL9503 Datasheet(PDF) 1 Page - DinTek Semiconductor Co,.Ltd |
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DTL9503 Datasheet(HTML) 1 Page - DinTek Semiconductor Co,.Ltd |
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1 / 7 page ![]() 1 P-Channel 30 V (D-S) MOSFET FEATURES • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a - 30 0.007 at VGS = - 10 V ± 75 0.010 at VGS = - 4.5 V ± 75 TO-220AB Top View GD S TO-263 S G Top View D S G D P-Channel MOSFET Notes: a. Package limited. b. Duty cycle 1 %. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID - 75a A TC = 125 °C - 65 Pulsed Drain Current IDM - 240 Avalanche Current IAR - 60 Repetitive Avalanche Energyb L = 0.1 mH EAR 180 mJ Power Dissipation TC = 25 °C (TO-220AB and TO-263) PD 187d W TA = 25 °C (TO-263) c 3.75 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount (TO-263)c RthJA 40 °C/W Free Air (TO-220AB) 62.5 Junction-to-Case RthJC 0.8 Available RoHS* COMPLIANT DT www. daysemi.jp |
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