AO6422_12 datasheet(2/4 Pages) AOSMD

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AO6422

Symbol

Min

Typ

Max

Units

BVDSS

TJ = 55°C

IGSS

±100

VGS(th)

0.4

0.65

ID(ON)

TJ=125°C

Ω

gFS

VSD

0.8

Ciss

450

560

Coss

Crss

4.9

7.5

Ω

Qg (4.5V)

6.2

8.2

Qgs

0.4

Qgd

1.3

tD(on)

4.5

Drain-Source Breakdown Voltage

On state drain current

ID = 250µA, VGS = 0V

VGS = 4.5V, VDS = 5V

VGS = 4.5V, ID = 5.0A

Reverse Transfer Capacitance

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

µA

Gate Threshold Voltage

VDS = VGS ID = 250µA

VDS = 20V, VGS = 0V

VDS = 0V, VGS = ±8V

Ω

IS = 1A,VGS = 0V

VDS = 5V, ID = 5.0A

VGS = 2.5V, ID = 4.5A

VGS = 1.8V, ID = 3.5A

Turn-On DelayTime

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate Drain Charge

VGS= 4.5V, VDS= 10V, ID= 5A

DYNAMIC PARAMETERS

Maximum Body-Diode Continuous Current

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=0V, VDS=10V, f=1MHz

Input Capacitance

Output Capacitance

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

tD(on)

4.5

tD(off)

7.1

trr

Qrr

3.3

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs

IF=5A, dI/dt=100A/µs

Turn-On Rise Time

Turn-Off DelayTime

VGS=4.5V, VDS=10V, RL=2Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A = 25°C. in

any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

Rev2: Feb. 2012

Alpha & Omega Semiconductor, Ltd.

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