SBP13005-S datasheet(1/4 Pages) SEMIWELL

Part #	SBP13005-S

Description	High Voltage Fast Switching NPN

PDF	4 Pages

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Manufacturer	SEMIWELL [SemiWell Semiconductor]

Direct Link	http://www.semiwellsemi.co.kr

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SBP13005-S

Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved

SemiWell Semiconductor

Absolute Maximum Ratings (TJ = 25℃ unless otherwise specified)

Symbol

Parameter

Condition

Value

Units

VCES

Collector-Emitter Voltage

VBE = 0

700

V

VCEO

Collector-Emitter Voltage

IB = 0

400

V

VEBO

Emitter-Base Voltage

IC = 0

9.0

V

IC

Collector Current

4.0

A

ICP

Collector pulse Current

8.0

A

IB

Base Current

2.0

A

IBM

Base Peak Current

tP = 5ms

4.0

A

PC

Total Dissipation at TC = 25℃

75

W

TJ

Operation Junction Temperature

- 40 ~ 150

℃

TSTG

Storage Temperture

- 40 ~ 150

℃

Thermal Characteristics

Symbol

Parameter

Ratings

Unit

RθJC

Thermal Resistance Junction to Case

1.67

℃/W

RθJA

Thermal Resistance Junction to Ambient

62.5

℃/W

High Voltage Fast Switching NPN

Power Transistor

Features

◆

Very High Switching Speed

◆

Minimum lot to lot hFE Variation

◆

Wide Reverse Bias SOA

General Description

This Device is designed for high voltage, High speed

switching characteristics required such as lighting system,

switching mode power supply.

Oct 2008. Rev. 0

1/4

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