2

DIAGRAM 1: Current-voltage characteristics

FIG.1-Power dissipation versus ambient

temperature (maximum values)

FIG.3-Peak pulse current versus pulse duration

(maximum values)

FIG.2-Relative variation of VBO versus junction

temperature(typical values)

DIAGRAM 2: Test circuit for output voltage

DIAGRAM 3: Test circuit see diagram2 adjust R for

I =0.5A

P

90%

10%

tr

10K

W

220V

50Hz

500K

W

D.U.T

R=20

W

0.1 F

m

Tamb( C)

P (mW)

V(T )

V

(T =25 C)

BO

J

BO

J

0

10

0.01

0.1

1

2

100

1000

10000

10 20 30 40 50 60 70 80

100 110 120 130

25

1.00

1.02

1.04

1.06

1.08

50

75

100

125

125

90

0

20

40

60

80

100

120

140

160

f=100Hz

T initial=25 C

J

tp( s)

m

10mA

V

+V

-V

ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ

LLDB3/LLDC34/LLDB4/LLDB6

SILICON BIDIRECTIONAL DIAC

星合电子

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