ET4N60-252-R datasheet(2/8 Pages) ESTEK

2 / 8 page

ET4N60

www.estek.com.cn

Version 0.2

26 Sep 2011

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

VDSS

Drain to Source Voltage

600

Continuous Drain Current(@TC = 25 °C)

4.0

Continuous Drain Current(@TC = 100 °C)

2.5

IDM

Drain Current Pulsed

VGS

Gate to Source Voltage

+30

EAS

Single Pulsed Avalanche Energy

240

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

4.5

V/ns

TO-220

105

TO-220F

Total Power Dissipation

(@TC = 25 °C)

TO-252

TSTG, TJ

Storage Temperature, Junction Temperature

-55~150

°C

Notes:

(1).. Repeativity rating : pulse width limited by junction temperature

(2).. L = 27.5mH, IAS = 4.0 A, VDD = 50 V, RG = 25 Ω , Starting TJ = 25 °C

(3).. ISD ≤ 4.0 A, di/dt ≤ 200 A/us, VDD ≤ BVDSS, Starting TJ = 25 °C

Thermal Characteristics

Value

Symbol

Parameter

Min.

Typ.

Max.

Units

TO-220

1.18

TO-220F

3.79

RθJC

Thermal Resistance,

Junction-to-Case

TO-252

2.5

TO-220

62.5

TO-220F

62.5

RθJA

Thermal Resistance,

Junction-to-Ambient

TO-252

°C/W

Source-Drain Diode Characteristics and Maximum Ratings

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Maximum Continuous Source-Drain Diode Forward Current

4.0

ISM

Maximum Pulsed Source-Drain Diode Forward Current

VSD

Diode Forward Voltage

IS = 4.0 A, VGS = 0 V

1.4

trr

Reverse Recovery Time

300

Qrr

Reverse Recovery Charge

IS = 4.0 A, VGS = 0 V,

dIF/dt = 100 A/us

2.2

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